november 2013 fdpf14n30 ? n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdpf14n30 rev. c1 www.fairchildsemi.com 1 fdpf14n30 n-channel unifet tm mosfet 300 v, 14 a, 290 m features ?r ds(on) = 290 m (max.) @ v gs = 10 v, i d = 7 a ? low gate charge (typ. 18 nc) ?low c rss (typ. 17 pf) ? 100% avalanche tested ? improved dv/dt capability applications ?pdp tv ? uninterruptible power supply description unifet tm mosfet is fairchild semiconductor?s high voltage mosfet family based on planar stripe and dmos technology. this mosfet is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. this device family is suitable for switching power converter applications such as power factor correction (pfc), flat panel display (fpd) tv power, atx and electronic lamp ballasts. to-220f g d s g s d absolute maximum ratings t c = 25c unless otherwise noted. thermal characteristics symbol parameter fdpf14n30 unit v dss drain-source voltage 300 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 1 4 * 8.4 * a a i dm drain current - pulsed (note 1) 56 * a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 330 mj i ar avalanche current (note 1) 14 a e ar repetitive avalanche energy (note 1) 14 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 35 0.28 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering, 1/8? from case for 5 seconds 300 c symbol parameter fdpf14n30 unit r jc thermal resistance, junction-to-case, max. 3.56 c/w r ja thermal resistance, junction-to-ambient, max. 62.5 *drain current limited by maximum junction temperature.
fdpf14n30 ? n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdpf14n30 rev. c1 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25c unless otherwise noted. notes: 1. repetitive rating: pulse-width li mited by maximum junction temperature. 2. l = 2.8 mh, i as = 14 a, v dd = 50 v, r g = 25 , starting t j = 25 c. 3. i sd 14 a, di/dt 200 a/ s, v dd bv dss , starting t j = 25 c. 4. essentially independent of operating temperature typical characteristics. part number top mark package packing method reel size tape width quantity fdpf14n30 fdpf14n30 to-220f tube n/a n/a 50 units symbol parameter conditions min. typ. max. unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 300 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c--0.3--v/ c i dss zero gate voltage drain current v ds = 300 v, v gs = 0 v v ds = 240 v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a3.0--5.0v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 7 a -- 0.24 0.29 g fs forward transconductance v ds = 40 v, i d = 7 a -- 10.5 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 815 1060 pf c oss output capacitance -- 150 195 pf c rss reverse transfer capacitance -- 17 25 pf switching characteristics t d(on) turn-on delay time v dd = 150 v, i d = 14 a, v gs = 10 v, r g = 25 (note 4) -- 20 50 ns t r turn-on rise time -- 105 120 ns t d(off) turn-off delay time -- 30 70 ns t f turn-off fall time -- 75 160 ns q g total gate charge v ds = 240 v, i d = 14 a, v gs = 10 v (note 4) -- 18 25 nc q gs gate-source charge -- 4.5 -- nc q gd gate-drain charge -- 8 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 14 a i sm maximum pulsed drain-source diode forward current -- -- 56 a v sd drain-source diode forward voltage v gs = 0 v, i s = 14 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 14 a, di f /dt =100 a/ s -- 235 -- ns q rr reverse recovery charge -- 1.6 -- c
fdpf14n30 ? n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdpf14n30 rev. c1 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 24681012 10 0 10 1 10 2 150 o c 25 o c -55 o c * notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 35 40 45 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 10 0 10 1 10 2 150 o c * notes : 1. v gs = 0v 2. 250 s pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 1000 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 v ds = 150v v ds = 60v v ds = 240v * note : i d = 14a v gs , gate-source voltage [v] q g , total gate charge [nc]
fdpf14n30 ? n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdpf14n30 rev. c1 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case tempe rature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 7 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 5 10 15 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 * n otes : 1. z jc (t) = 3.56 o c/w max. 2. d uty f actor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 z jc (t), thermal response [ o c/w]
fdpf14n30 ? n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdpf14n30 rev. c1 www.fairchildsemi.com 5 figure 12. gate charge test circuit & waveform figure 13. resistive switching test circuit & waveforms figure 14. unclamped inductive switching test circuit & waveforms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p v gs v gs i g = const.
fdpf14n30 ? n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdpf14n30 rev. c1 www.fairchildsemi.com 6 figure 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fdpf14n30 ? n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdpf14n30 rev. c1 www.fairchildsemi.com 7 mechanical dimensions figure 16. to220, molded, 3-lead, full pack, eiaj sc91, straight lead package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tf220-003
fdpf14n30 ? n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdpf14n30 rev. c1 www.fairchildsemi.com 8 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or desi gn. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support de vices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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